在現今超大型積體電路的應用上，SOI基板有著許多比傳統矽基板更好的優點，而由Bruel等人所發明的Smart-Cut®技術可製造高品質的SOI結構，成為了最被期待與接受的技術，也因此Smart-Cut® 技術開始吸引了大家的關注，相關的研究也一直被學者們探討著，其中關於晶圓鍵合前後對氫離子聚集影響的研究，有學者們提出了他們的看法，認為鍵合後會等同於加深離子佈植的深度，促使氫氣泡傾向於橫向地發展，但是這麼多年以來卻沒有太多相關的實驗加以佐證。 本研究便是利用了多晶矽沉積層存在與否，藉以代替晶圓鍵合前後，討論氫氣泡的發展情況，由實驗結果得知，多晶矽沉積層的確會促使氫氣泡橫向地發展，驗證了學者們對鍵合後氫氣泡發展的說法，而實驗中所使用到的多晶矽層僅有150nm厚，發現了如此薄的薄膜層即可對氫離子聚集有很大的影響，期盼此發現能在未來有所應用。 SOI technology has substantial advantages over traditional bulk Si processing for a wide range of ULSI applications. Smart-Cut® Process technology is a promising technology recently developed by Bruel and his co-workers to fabricate high quality SOI structures. The Smart-Cut® technique has attracted increasingly extensive attentions and has found practical applications in the field of SOI. Many related research have also been discussed. And about wafer bonding to hydrogen ions assemble effect influence research has some views, the scholars thought bonded wafer will deepen the depth of implantation. The hydrogen bubble will tend to transversely develop. But it did not have any related experiment evidences since these years. In this study, We use a layer of polysilicon, so as to substitute for bonded wafer, and we will discuss the development of the hydrogen bubble. By experimental result we can find that hydrogen bubble indeed tend to transversely develop. The views of scholars can be verified. We also can find that the thickness of polycrystalline silicon layer is only 150nm. It can make a great impact on the development of hydrogen bubble. We hope that this discovery could be applied in the future.
