半導體產業日益發展使得矽晶圓使用量大增，衍生原物料短缺之問題。產業對晶圓再生利用的需求性與日俱增，而傳統的晶圓再生製程尚有環境性、加工性等問題急需解決。本研究主要針對磨料噴射加工法於晶圓表面異質層移除的缺點進行改善，因傳統磨料噴射撞擊會造成表面不平整，徒增後續處理之困擾。本研究擬研發微彈性的新型複合磨料，其具有吸收衝擊能量特性，希望藉此能有效改善加工過度、表面粗糙度的問題，進而降低後續製程處理成本。 研究主要分為兩大部分，第一部份為複合磨料的製備及加工性探討：將加熱後之碳化矽(SiC)披覆於聚苯乙烯(PS)球狀顆粒以製成新型複合磨料，實驗證明在設定溫度200℃及披覆粒徑#3000時可獲得形貌完整、披覆均勻的複合磨料，藉由加工性測試可發現複合磨料確實降低裂痕衍生的機率。第二部分則利用田口實驗設計針對晶圓表面異質層處理進行實驗，探討各參數對表面粗糙度與材料移除率的影響。經實驗結果得知，較佳製程參數組合為：披覆磨料號數#3000SiC、衝擊角度30°、噴射距離70mm、噴射壓力0.4MPa及旋轉平台轉速250rpm。可於5分鐘內將晶圓表面異質層完全去除，經EDS檢測證實無其他元素殘留，且達到表面粗糙度0.118 μm Ra。由實驗證明本研究所開發的複合磨料可完全移除晶圓表面異質層且獲得較佳的表面粗糙度。 That the development of semiconductor industry flourishes vigorously makes the great use of Si wafer and that triggers the problems of original material shortage. The industry insistently demands the wafer reclamation, but the traditional wafer reclaiming process still has some environmental and processing problems. This research aims at improving the shortcomings of the abrasive jet machining working on the wafer surface hetero layer detachment, because the traditional abrasive jet machining could cause rough surface and afterward disturbance. The research plans to develop a new compound abrasive that has the absorption impact energy response in order to improve the problems of excessively processing and the surface roughness, then to reduce the cost of the following system regulation processing. The study is divided into two parts. The first part focuses on the preparation of the new compound abrasive and the examination of the processing: The SiC is heated before coating on the polystyrene spherical pellet to make a new compound abrasive .The experiment proves that under the setting of temperature 200 ℃ and coating mesh size #3000 SiC, the result obtains the integrity of new compound abrasive .Based on the processing tests, the novel compound abrasive truly reduces the possibility of the cracks. The second part is to use the Taguchi method experiment on wafer surface hetero layer processing to discuss various parameters that influence the surface roughness and the material removal rate. The experiment proves that the good machining parameter combination is Abrasive mesh size 3000 SiC、Impact angle 30°、stand-off distance 70mm、Impact pressure 0.4 MPa and rotation platform speed 250 rpm. The wafer surface hetero layer is completely removed within 5 minutes and the EDS examination confirms that there are no other elements remained and the result also achieves the surface roughness 0.118 um Ra. The experiment proves that the novel compound abrasive can completely remove the hetero layer on wafer surface and obtain the better surface roughness.
