Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32117

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32117

Title:	Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors
Authors:	Wang,Che-ming;Hsin,Yue-Ming
Contributors:	電機工程研究所
Keywords:	INP/INGAAS HBTS
Date:	2007
Issue Date:	2010-07-06 18:18:58 (UTC+8)
Publisher:	中央大學
Abstract:	InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors (HBTs) with InAlAs-InP composite emitter have been grown, fabricated, and characterized at various temperatures from 77 to 400 K. The InAlAs-InP composite emitter structure effectively reduce
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[電機工程研究所] 期刊論文

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	390	View/Open

社群 sharing