BCB-bridged distributed wideband SPST switch using 0.25-mu m In0.5Al0.5As-In0.5Ga0.5As metamorphic HEMTs

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32274

Title:	BCB-bridged distributed wideband SPST switch using 0.25-mu m In0.5Al0.5As-In0.5Ga0.5As metamorphic HEMTs
Authors:	Lin,CK;Wang,WK;Chan,YJ;Chiou,HK
Contributors:	電機工程研究所
Keywords:	HIGH-PERFORMANCE;GAAS;TRANSISTORS;MODFETS;GHZ
Date:	2005
Issue Date:	2010-07-06 18:22:55 (UTC+8)
Publisher:	中央大學
Abstract:	In(0.5)AI(0.5)As-In0.5Ga0.5As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-kappa. benzocyclobutene (BCB) bridged technology. The current g
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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