Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches

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Title:	Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches
Authors:	Hsin,YM;Tang,WB;Hsu,HT
Contributors:	電機工程研究所
Keywords:	HETEROJUNCTION BIPOLAR-TRANSISTOR
Date:	2005
Issue Date:	2010-07-06 18:25:00 (UTC+8)
Publisher:	中央大學
Abstract:	Temperature dependence of electron effective saturation velocity in GaAs is determined from do and RF characteristics of InGaP/GaAs heterojunction bipolar transistor (HBT) under different substrate temperatures (from -40 degreesC to 200 degreesC). Two app
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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