High linearity InGaP/GaAs power HBTs by collector design

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Title:	High linearity InGaP/GaAs power HBTs by collector design
Authors:	Wang,CM;Hsu,HT;Shu,HC;Hsin,YM
Contributors:	電機工程研究所
Date:	2004
Issue Date:	2010-07-06 18:26:37 (UTC+8)
Publisher:	中央大學
Abstract:	Improved power linearity of InGaP/GaAs heterojunction bipolar transistors (HBTs) with collector design is reported. The collector design is based on nonuniform collector doping profile which is to employ a high-doping layer (5 X 10(17) CM-3 /200 Angstrom)
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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