Si+ ion implanted MPS bulk GaN diodes

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32449

Title:	Si+ ion implanted MPS bulk GaN diodes
Authors:	Irokawa,Y;Kim,J;Ren,F;Baik,KH;Gila,BP;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Park,SS
Contributors:	電機工程研究所
Keywords:	P-I-N;SCHOTTKY RECTIFIERS;BREAKDOWN VOLTAGE;POWER RECTIFIERS;EDGE TERMINATION;DESIGN;PERFORMANCE;SINGLE
Date:	2004
Issue Date:	2010-07-06 18:28:13 (UTC+8)
Publisher:	中央大學
Abstract:	The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si+ ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 mum were investigated. These initial NIPS diodes show larger turn-on v
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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