Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

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題名:	Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors
作者:	Kang,BS;Kim,S;Kim,J;Ren,F;Baik,K;Pearton,SJ;Gila,BP;Abernathy,CR;Pan,CC;Chen,GT;Chyi,JI;Chandrasekaran,V;Sheplak,M;Nishida,T;Chu,SNG
貢獻者:	電機工程研究所
關鍵詞:	PIEZOELECTRIC POLARIZATION;HETEROSTRUCTURES;PERFORMANCE;DEFECTS;DEVICES;HEMTS;GAN
日期:	2003
上傳時間:	2010-07-06 18:29:03 (UTC+8)
出版者:	中央大學
摘要:	The changes in the conductance of the channel of Al0.3Ga0.7N/GaN high-electron-mobility transistor structures during the application of both tensile and compressive strain were measured. For a fixed Al mole fraction, the changes in the conductance were ro
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[電機工程研究所] 期刊論文

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