Carrier transfer effects and thermal activation behaviors in the photoluminescence of In(Ga)As self-assembled quantum dots

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Title:	Carrier transfer effects and thermal activation behaviors in the photoluminescence of In(Ga)As self-assembled quantum dots
Authors:	Chang,WH;Hsu,TM;Yeh,NT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	TEMPERATURE-DEPENDENCE;WELL STRUCTURES;LINE-SHAPE;EMISSION;RELAXATION;EXCITONS;ESCAPE;LASERS
Date:	2002
Issue Date:	2010-07-06 18:30:57 (UTC+8)
Publisher:	中央大學
Abstract:	We report the temperature-dependent [photoluminescence] (PL) of InAs and InxGa1-xAs quantum-dot (QD) systems. Due to the effect of carrier transport in the wetting layer (WL), anomalous increases in the QD PL intensity at low temperatures are found. Sever
Relation:	CHINESE JOURNAL OF PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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