Enhanced power performance of enhancement-mode Al0.5Ga0.5As/In0.15Ga0.85As pHEMTs using a low-k BCB passivation

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Title:	Enhanced power performance of enhancement-mode Al0.5Ga0.5As/In0.15Ga0.85As pHEMTs using a low-k BCB passivation
Authors:	Chiu,HC;Hwu,MJ;Yang,SC;Chan,YJ
Contributors:	電機工程研究所
Keywords:	LEAKAGE CURRENT;SUPPRESSION;HEMTS
Date:	2002
Issue Date:	2010-07-06 18:31:16 (UTC+8)
Publisher:	中央大學
Abstract:	Surface passivation technology plays an important role, especially in E-mode pHEMTs applications, and a new passivation technology has been proposed in this study. This novel benzocyclobutene (BCB) passivation layer takes advantages of the low dielectric
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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