Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures

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題名:	Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
作者:	Feng,SW;Cheng,YC;Chung,YY;Yang,CC;Mao,MH;Lin,YS;Ma,KJ;Chyi,JI
貢獻者:	電機工程研究所
關鍵詞:	TIME-RESOLVED PHOTOLUMINESCENCE;MOLECULAR-BEAM EPITAXY;DYNAMICS;DOTS
日期:	2002
上傳時間:	2010-07-06 18:31:54 (UTC+8)
出版者:	中央大學
摘要:	Based on wavelength-dependent and temperature-varying time-resolved photoluminescence (PL) measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in an InGaN/GaN quantum well structure was propo
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[電機工程研究所] 期刊論文

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