High power In0.49Ga0.51P/In0.15Ga0.85As heterostructure doped-channel FETs

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Title:	High power In0.49Ga0.51P/In0.15Ga0.85As heterostructure doped-channel FETs
Authors:	Chiu,HC;Yang,SC;Chan,YJ;Lin,HH
Contributors:	電機工程研究所
Keywords:	HIGH-EFFICIENCY;PERFORMANCE;DESIGN;HEMTS
Date:	2001
Issue Date:	2010-07-06 18:33:51 (UTC+8)
Publisher:	中央大學
Abstract:	A high barrier Schottky gate on InGaP/InGaAs doped-channel FETs (DCFETs) provides a high current density, high gate-to-drain breakdown voltage and a better linear operation over a wide gate bias range. However, these doped-channel devices are limited by a
Relation:	IEICE TRANSACTIONS ON ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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