Improvement of diodes performance with a multiple-pair buffer layer by MOCVD

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Title:	Improvement of diodes performance with a multiple-pair buffer layer by MOCVD
Authors:	Yang,CC;Wu,MC;Chi,GC;Chuo,CC;Chyi,JI
Contributors:	電機工程研究所
Keywords:	LIGHT-EMITTING DIODES;GAN
Date:	2001
Issue Date:	2010-07-06 18:33:58 (UTC+8)
Publisher:	中央大學
Abstract:	The GaN home-junction light-emitting diodes (LEDs) with a multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 Angstrom thick GaN nucleation layer grown at
Relation:	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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