Properties and effects of hydrogen in GaN

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Title:	Properties and effects of hydrogen in GaN
Authors:	Pearton,SJ;Cho,H;Ren,F;Chyi,JI;Han,J;Wilson,RG
Contributors:	電機工程研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;P-TYPE GAN;MG;PASSIVATION;ACCEPTORS;DEFECTS;SEMICONDUCTORS;COMPENSATION;ACTIVATION;ALN
Date:	2000
Issue Date:	2010-07-06 18:36:26 (UTC+8)
Publisher:	中央大學
Abstract:	The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n d
Relation:	MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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