Reducing source and drain resistances in InGaP/lnGaAs doped-channel HFETs using delta-doping Schottky layer

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Title:	Reducing source and drain resistances in InGaP/lnGaAs doped-channel HFETs using delta-doping Schottky layer
Authors:	Chiu,HC;Chien,FT;Yang,SC;Kuo,CW;Chan,YJ
Contributors:	電機工程研究所
Date:	2000
Issue Date:	2010-07-06 18:36:30 (UTC+8)
Publisher:	中央大學
Abstract:	InGaP/InGaAs/GaAs dual doped-channel field-effect transistors (DCFETs) have been fabricated and demonstrated in terms of their DC, RF, and power performances. These performances can be improved by inserting a delta-doping layer on top of the undoped Schot
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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