Characterization of gallium nitride grown on patterned sapphire substrate with shallow U-shaped stripe grooves

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35186

Title:	Characterization of gallium nitride grown on patterned sapphire substrate with shallow U-shaped stripe grooves
Authors:	Lee,Ko-Tao;Lee,Yeeu-Chang;Chang,Jeng-Yang
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;CHEMICAL-VAPOR-DEPOSITION;GAN EPITAXIAL LAYERS;DISLOCATION-DENSITY;THREADING DISLOCATIONS;LATERAL OVERGROWTH;PHASE EPITAXY;FABRICATION;REDUCTION;PLASMAS
Date:	2008
Issue Date:	2010-07-07 14:05:54 (UTC+8)
Publisher:	中央大學
Abstract:	A patterned sapphire substrate with shallow U-shaped stripe grooves along the < 11 (2) over bar0 > direction prepared by chemical wet etching was used for the growth of high-quality gallium-nitride-based epilayers without air gap formation. From character
Relation:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY?
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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