Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InlN double-buffer layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35203

Title:	Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InlN double-buffer layers
Authors:	Li,Zhen-Yu;Lan,Shan-Ming;Uen,Wu-Yih;Chen,Ying-Ru;Chen,Meng-Chu;Huang,Yu-Hsiang;Ku,Chien-Te;Liao,Sen-Mao;Yang,Tsun-Neng;Wang,Shing-Chung;Chi,Gou-Chung
Contributors:	光電科學與工程學系
Keywords:	MOLECULAR-BEAM EPITAXY;FUNDAMENTAL-BAND GAP;INDIUM NITRIDE;HEXAGONAL INN;WURTZITE INN;MOVPE INN;RF-MBE;FILMS;SI(111);TEMPERATURE
Date:	2008
Issue Date:	2010-07-07 14:06:26 (UTC+8)
Publisher:	中央大學
Abstract:	Indium nitride (InN) epilayers have been successfully grown on Si (111) substrates with low-temperature (450 degrees C) grown InN and high-temperature (1050 degrees C) grown AlN (InlN) double-buffer layers by atmospheric-pressure metal-organic chemical
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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