Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35213

Title:	Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer
Authors:	Kuo,C. H.;Yeh,C. L.;Chen,P. H.;Lai,W. C.;Tun,C. J.;Sheu,J. K.;Chi,G. C.
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;P-TYPE GAN;EXTRACTION EFFICIENCY;SAPPHIRE SUBSTRATE;NEAR-ULTRAVIOLET;SURFACE
Date:	2008
Issue Date:	2010-07-07 14:06:44 (UTC+8)
Publisher:	中央大學
Abstract:	We have developed nitride-based multiquantum well light-emitting diodes (LEDs) with E-beam evaporated Al-doped ZnO (AZO) transparent contact layers (TCLs). With 20 mA injection current, it was found that forward voltages were 3.32, 3.33, and 4.91 V, while
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS????
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	483	View/Open

社群 sharing