Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35258

Title:	Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer
Authors:	Sheu,Jinn-Kong;Lu,Y. S.;Lee,Min-Lum;Lai,W. C.;Kuo,C. H.;Tun,Chun-Ju
Contributors:	光電科學與工程學系
Keywords:	OHMIC CONTACTS;OUTPUT;POWER
Date:	2007
Issue Date:	2010-07-07 14:08:13 (UTC+8)
Publisher:	中央大學
Abstract:	GaN-based light-emitting diodes (LEDs) with indium tin oxide (ITO)/Ga-doped ZnO (GZO) composite oxide films serving as a transparent contact layer (TCL) were demonstrated. In this study, the wall-plug efficiency of LEDs (LED-III) with textured ITO/GZO com
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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