Investigation of Ga oxide films directly grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35356

Title:	Investigation of Ga oxide films directly grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser
Authors:	Lee,CT;Chen,HW;Hwang,FT;Lee,HY
Contributors:	光電科學與工程學系
Keywords:	SPECTROSCOPY;DIELECTRICS;INSULATOR
Date:	2005
Issue Date:	2010-07-07 14:11:39 (UTC+8)
Publisher:	中央大學
Abstract:	By using a He-Cd laser in a chemical solution of H3PO4 with a pH value of 3.5, Ga oxide films were directly grown on n-type GaN. From the energy-dispersive spectrometer (EDS) measurement and x-ray diffraction (XRD) measurement, the grown Ga oxide film was
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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