Photoluminescence degradation and passivation mechanisms of Si nanoclusters in silicon oxide matrix

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35367

Title:	Photoluminescence degradation and passivation mechanisms of Si nanoclusters in silicon oxide matrix
Authors:	Lee,CT;Lin,CH;Lee,TH;Tsai,TC
Contributors:	光電科學與工程學系
Keywords:	OPTICAL-PROPERTIES;FILMS;NANOCRYSTALS;NANOSTRUCTURES;TEMPERATURE;OXIDATION;LIGHT;O2
Date:	2005
Issue Date:	2010-07-07 14:12:08 (UTC+8)
Publisher:	中央大學
Abstract:	The Si nanoclusters embedded in a silicon oxide matrix were prepared using a laser-assisted chemical vapor deposition (LACVD) system. A degradation of photoluminescence (PL) by irradiating the sample with helium-cadmium (He-Cd) laser was observed. The dep
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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