The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35372

Title:	The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors
Authors:	Wang,CK;Ko,TK;Chang,CS;Chang,SJ;Su,YK;Wen,TC;Kuo,CH;Chiou,YZ
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;TUNNELING CONTACT;GAN
Date:	2005
Issue Date:	2010-07-07 14:12:20 (UTC+8)
Publisher:	中央大學
Abstract:	By means of 60-, 150-, and 300-nm-thick blocking p-Al0.1Ga0.9N layers, we have successfully achieved high performance on nitride-based p-i-n bandpass photodetectors. The peak responsivities were estimated to be 0.131, 0.129, and 0.13 A/W at 354, 357, and
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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