Fabry-Perot structures for attenuated phase-shifting mask application in ArF and F-2 lithography

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35421

Title:	Fabry-Perot structures for attenuated phase-shifting mask application in ArF and F-2 lithography
Authors:	Chen,HL;Wu,HS;Lee,CC;Ko,FH;Fan,W;Hsieh,CI
Contributors:	光電科學與工程學系
Keywords:	157 NM;ULTRAVIOLET
Date:	2003
Issue Date:	2010-07-07 14:14:13 (UTC+8)
Publisher:	中央大學
Abstract:	We demonstrate a structure for an attenuated phase-shifting mask (APSM) which is based on a three-layer Fabry-Perot structure for ArF (193 nm) and F-2 (157 run) excimer laser based lithographies. The APSM structure is composed of a metal/dielectric/metal
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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