Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35427

Title:	Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
Authors:	Tu,RC;Chuo,CC;Pan,SM;Fan,YM;Tsai,CE;Wang,TC;Tun,CJ;Chi,GC;Lee,BC;Lee,CP
Contributors:	光電科學與工程學系
Keywords:	EXTERNAL QUANTUM EFFICIENCY;VAPOR-PHASE EPITAXY;THREADING DISLOCATIONS;WELLS INGAN/GAN;UNDERLYING GAN;OUTPUT POWER;LASER-DIODES;SUBSTRATE;EVOLUTION;PRESSURE
Date:	2003
Issue Date:	2010-07-07 14:14:27 (UTC+8)
Publisher:	中央大學
Abstract:	Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. I
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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