Investigation of accumulated carrier mechanism on sulfurated GaN layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35431

Title:	Investigation of accumulated carrier mechanism on sulfurated GaN layers
Authors:	Lin,YJ;Lee,CS;Lee,CT
Contributors:	光電科學與工程學系
Keywords:	N-TYPE GAN;OHMIC CONTACT FORMATION;TI/AL CONTACTS
Date:	2003
Issue Date:	2010-07-07 14:14:37 (UTC+8)
Publisher:	中央大學
Abstract:	We study the induced electron concentration accumulated on the sulfurated layer of the (NH4)(2)S-x- treated n-type GaN layers using a simple resistance model. The electron concentration within the sulfurated layer increased from its original value of 6.9x
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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