Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35438

Title:	Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air
Authors:	Lee,CT;Lin,YJ;Lee,TH
Contributors:	光電科學與工程學系
Keywords:	P-TYPE GAN;N-TYPE GAN;ELECTRICAL-PROPERTIES;PHOTOELECTRON;DEFECTS;LAYERS
Date:	2003
Issue Date:	2010-07-07 14:14:53 (UTC+8)
Publisher:	中央大學
Abstract:	Recently, Au/Ni/p-type GaN ohmic contacts annealed in an air ambient have been widely investigated. However, to obtain a low specific-contact resistance, the annealing window is limited. In this study, to understand the oxidation function of metallic Ni,
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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