The investigation for various treatments of InAlGaP Schottky diodes

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35455

Title:	The investigation for various treatments of InAlGaP Schottky diodes
Authors:	Lee,HY;Lee,CT
Contributors:	光電科學與工程學系
Keywords:	ELECTRONIC BAND-STRUCTURE;MOLECULAR-BEAM EPITAXY;GAAS
Date:	2003
Issue Date:	2010-07-07 14:15:37 (UTC+8)
Publisher:	中央大學
Abstract:	We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In-0.5(Al0.66Ga0.34)(0.5)P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In-0.5(Al0.66Ga0.34)(0.
Relation:	OPTICAL MATERIALS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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