Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH4)(2)S-x-treated n-type GaN layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35480

Title:	Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH4)(2)S-x-treated n-type GaN layers
Authors:	Lee,CT;Lin,YJ;Lin,CH
Contributors:	光電科學與工程學系
Keywords:	RAY PHOTOELECTRON-SPECTROSCOPY;P-TYPE GAN;ELECTRICAL-PROPERTIES;SURFACE TREATMENTS;THERMAL-STABILITY;SPUTTERED TIN;FILMS;METAL;MICROSTRUCTURE;PERFORMANCE
Date:	2002
Issue Date:	2010-07-07 14:23:58 (UTC+8)
Publisher:	中央大學
Abstract:	We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH4)(2)S-x-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH4)(2)S-x solution. The resul
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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