Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35481

Title:	Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers
Authors:	Lee,CT;Lee,HY;Lin,HH
Contributors:	光電科學與工程學系
Keywords:	MULTIQUANTUM BARRIER;MESFETS
Date:	2002
Issue Date:	2010-07-07 14:24:27 (UTC+8)
Publisher:	中央大學
Abstract:	We present a novel GaAs metal-semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29: 6, 5, 7: 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effe
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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