Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35508

Title:	Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices
Authors:	Kuo,CH;Sheu,JK;Chi,GC;Huang,YL;Yeh,TW
Contributors:	光電科學與工程學系
Keywords:	P-TYPE GAN;FIELD-EFFECT TRANSISTOR;SINGLE-CRYSTAL GAN;N-TYPE GAN;ELECTRICAL-PROPERTIES;WORK-FUNCTIONS;PERFORMANCE;FILMS;CA
Date:	2001
Issue Date:	2010-07-07 14:34:28 (UTC+8)
Publisher:	中央大學
Abstract:	Electrical properties of Ni (6 nm)/Au (14 nm) contacts to Mg-doped strained layer Al0.15Ga0.85N/GaN supel lattices have been analyzed. The hole concentration and mobility are around 1 x 10(18) cm(3) and 10 cm(2)/V s, respectively. Hall effect measurements
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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