The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3 x 10(-4) Omega cm(2) were achieved for the ITO/ZnO/GaN structure annealed at 500 degreesC f
關聯:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
