Schottky barrier height and surface state density of Ni/Au contacts to (NH4)(2)S-x-treated n-type GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35517

Title:	Schottky barrier height and surface state density of Ni/Au contacts to (NH4)(2)S-x-treated n-type GaN
Authors:	Lee,CT;Lin,YJ;Liu,DS
Contributors:	光電科學與工程學系
Keywords:	OHMIC CONTACTS;SPECTROSCOPY;MICROSCOPY
Date:	2001
Issue Date:	2010-07-07 14:34:42 (UTC+8)
Publisher:	中央大學
Abstract:	By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)(2)S-x treatment. The Schottky barrier height of 1.099 eV i
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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