中大學術數位典藏-NCU Institutional Repository:Item 987654321/35536
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 94459/94459 (100%)
造訪人次 : 87654863      線上人數 : 258
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/35536


    Title: High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers
    Authors: Lee,CT;Tsai,CD;Shiao,HP
    Contributors: 光電科學與工程學系
    Date: 2000
    Issue Date: 2010-07-07 14:35:21 (UTC+8)
    Publisher: 中央大學
    Abstract: We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur tre
    Relation: OPTICAL MATERIALS
    Appears in Collections:[光電科學與工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML731View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明