Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35553

Title:	Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy
Authors:	Tsai,CD;Lee,CT
Contributors:	光電科學與工程學系
Keywords:	MSM PHOTODETECTORS;SCHOTTKY CONTACT;TI/PT/AU METALS;GAAS;PERFORMANCES;RELIABILITY;INP
Date:	2000
Issue Date:	2010-07-07 14:35:55 (UTC+8)
Publisher:	中央大學
Abstract:	We present the passivation mechanism and the chemistry of an (NH4)(2)S-x treated (100) InGaP surface using x-ray photoelectron spectroscopy. The native oxide on the as-etched InGaP surface could be further removed by a suitable (NH4)(2)S-x-treatment proce
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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