Hot carrier photoluminescence in InN epilayers Hot carrier photoluminescence in InN epilayers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38186

Title:	Hot carrier photoluminescence in InN epilayers Hot carrier photoluminescence in InN epilayers
Authors:	Yang,M. D.;Chen,Y. P.;Shu,G. W.;Shen,J. L.;Hung,S. C.;Chi,G. C.;Lin,T. Y.;Lee,Y. C.;Chen,C. T.;Ko,C. H.
Contributors:	物理研究所
Keywords:	BAND-GAP;EXCITATION;ELECTRONS
Date:	2008
Issue Date:	2010-07-08 13:19:36 (UTC+8)
Publisher:	中央大學
Abstract:	The energy relaxation of electrons in InN epilayers is investigated by excitation- and electric field-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature of the hot carriers. It was found that the elect
Relation:	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING????
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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