Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for chloride ion detection

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38192

Title:	Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for chloride ion detection
Authors:	Hung,S. C.;Wang,Y. L.;Hicks,B.;Pearton,S. J.;Ren,F.;Johnson,J. W.;Rajagopal,P.;Roberts,J. C.;Piner,E. L.;Linthicum,K. J.;Chi,G. C.
Contributors:	物理研究所
Keywords:	REFERENCE ELECTRODE;TEMPLATE METHOD;TRANSISTORS;CHROMATOGRAPHY
Date:	2008
Issue Date:	2010-07-08 13:19:47 (UTC+8)
Publisher:	中央大學
Abstract:	We have demonstrated a selective area AgCl anodization process, which can be integrated with the fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) for chloride ion detection. A limit of detection of chloride ion concentration achieved wa
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS????
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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