Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors

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題名:	Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors
作者:	Kao,CJ;Chen,MC;Tun,CJ;Chi,GC;Sheu,JK;Lai,WC;Lee,ML;Ren,F;Pearton,SJ
貢獻者:	物理研究所
關鍵詞:	CHEMICAL-VAPOR-DEPOSITION;ELECTRON-MOBILITY TRANSISTORS;SEMICONDUCTOR-METAL PHOTODETECTORS;NUCLEATION LAYERS;SAPPHIRE SUBSTRATE;CAP LAYER;OXIDE;PASSIVATION;PERFORMANCE;DIELECTRICS
日期:	2005
上傳時間:	2010-07-08 13:27:47 (UTC+8)
出版者:	中央大學
摘要:	The performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with either uncapped surfaces or with low-temperature (LT) GaN or SiO2 or SiNx as gate insulators is reported. The sheet carrier concentrations of AlGaN/GaN HFETs with any of th
關聯:	JOURNAL OF APPLIED PHYSICS
顯示於類別:	[物理研究所] 期刊論文

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