Thermal stability of W2B and W2B5 contacts on ZnO

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38539

Title:	Thermal stability of W2B and W2B5 contacts on ZnO
Authors:	Ip,K;Khanna,R;Norton,DP;Pearton,SJ;Ren,F;Kravchenko,I;Kao,CJ;Chi,GC
Contributors:	物理研究所
Keywords:	LIGHT-EMITTING-DIODES;SINGLE-CRYSTAL ZNO;R-PLANE SAPPHIRE;N-TYPE ZNO;OHMIC CONTACTS;LOW-RESISTANCE;ELECTRICAL CHARACTERIZATION;SCHOTTKY CONTACTS;SURFACE BARRIERS;DEEP LEVELS
Date:	2005
Issue Date:	2010-07-08 13:30:33 (UTC+8)
Publisher:	中央大學
Abstract:	Rectifying contact formation on n-type bulk single crystal ZnO using novel W2B or W2B5 metallization schemes was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy (AES) measurements. When a single An overlayer was
Relation:	APPLIED SURFACE SCIENCE
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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