Transport properties of InN nanowires

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38543

Title:	Transport properties of InN nanowires
Authors:	Chang,CY;Chi,GC;Wang,WM;Chen,LC;Chen,KH;Ren,F;Pearton,SJ
Contributors:	物理研究所
Keywords:	INDIUM NITRIDE NANOWIRES;ELECTRON-TRANSPORT;THERMAL-STABILITY;OHMIC CONTACTS;BAND-GAP;GROWTH;TEMPERATURE;MECHANISM;NANORODS;INGAN
Date:	2005
Issue Date:	2010-07-08 13:30:41 (UTC+8)
Publisher:	中央大學
Abstract:	The transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The resistivity of the n-type InN nanowires with diameter > 100 nm was
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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