W2B-based ohmic contacts to n-GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38546

Title:	W2B-based ohmic contacts to n-GaN
Authors:	Khanna,R;Pearton,SJ;Ren,F;Kravchenko,I;Kao,CJ;Chi,GC
Contributors:	物理研究所
Keywords:	ELECTRON-MOBILITY TRANSISTORS;ALGAN/GAN HETEROSTRUCTURES;THERMAL-STABILITY;RESISTANCE;TI/AL;TI/AL/MO/AU;MICROSTRUCTURE;METALLIZATION;IMPLANTATION;RESISTIVITY
Date:	2005
Issue Date:	2010-07-08 13:30:47 (UTC+8)
Publisher:	中央大學
Abstract:	Ohmic contact formation on n-GaN using a novel Ti/Al/W2B/Ti/Au metallization scheme was studied using contact resistance, scanning electron microscopy and Auger electron spectroscopy measurements. A minimum specific contact resistivity of 7 x 10(-6) ohm c
Relation:	APPLIED SURFACE SCIENCE
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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