W2B-based rectifying contacts to n-GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38547

Title:	W2B-based rectifying contacts to n-GaN
Authors:	Khanna,R;Pearton,SJ;Ren,F;Kravchenko,I;Kao,CJ;Chi,GC
Contributors:	物理研究所
Keywords:	ELECTRON-MOBILITY TRANSISTORS;MULTILAYER OHMIC CONTACTS;W-SCHOTTKY CONTACTS;THERMAL-STABILITY;ALGAN/GAN HETEROSTRUCTURES;TI/AL/MO/AU;RESISTANCE;WSIX;METALLIZATION;IMPLANTATION
Date:	2005
Issue Date:	2010-07-08 13:30:48 (UTC+8)
Publisher:	中央大學
Abstract:	Schottky contact formation on n-GaN using a novel W2B/Ti/Au metallization scheme was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy measurements. A maximum barrier height of 0.55 eV was achieved on as-deposited
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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