Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38603

Title:	Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition
Authors:	Chen,WY;Chang,WH;Chou,AT;Hsu,TM;Chen,PS;Pei,ZW;Lai,LS
Contributors:	物理研究所
Keywords:	PHONONLESS RADIATIVE RECOMBINATION;PHOTOLUMINESCENCE;ALIGNMENT;EXCITONS;WELLS;SI
Date:	2004
Issue Date:	2010-07-08 13:32:35 (UTC+8)
Publisher:	中央大學
Abstract:	Photoluminescence spectroscopy has been used to study the optical properties of multiple stacked Ge/Si quantum dots (QDs) with different thickness of Si spacers inserted between the Ge dot layers. According to the emission energy of the stacked Ge/Si QDs,
Relation:	APPLIED SURFACE SCIENCE
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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