Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38703

Title:	Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
Authors:	Yeh,LS;Lee,ML;Sheu,JK;Chen,MG;Kao,CJ;Chi,GC;Chang,SJ;Su,YK
Contributors:	物理研究所
Keywords:	ULTRAVIOLET PHOTODETECTORS;DETECTORS;PERFORMANCE
Date:	2003
Issue Date:	2010-07-08 13:35:49 (UTC+8)
Publisher:	中央大學
Abstract:	GaN ultraviolet photodiodes with (i.e. sample 1) and without (i.e. sample 2) Mg-doped AlGaN/GaN strained-layer superlattice structure were both fabricated. It was found that we could achieve a near constant dark current of around 3 and 7 nA/cm(2) for samp
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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