Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38755

Title:	Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN
Authors:	Sheu,JK;Lee,ML;Yeh,LS;Kao,CJ;Tun,CJ;Chen,MG;Chi,GC;Chang,SJ;Su,YK;Lee,CT
Contributors:	物理研究所
Keywords:	SCHOTTKY-BARRIER DETECTORS;N-JUNCTIONS;PHOTODIODES
Date:	2002
Issue Date:	2010-07-08 13:37:32 (UTC+8)
Publisher:	中央大學
Abstract:	GaN n(+)-p junction diodes were fabricated by implanting Si atoms into p-GaN. It was shown that we could use these diodes as GaN-based planar photodetectors. It was found that the dark current density of the diodes was around 1.5 muA/cm(2) and 50 nA/cm(2)
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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