Title: | Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
Authors: | Chen,CC;Hsueh,TH;Ting,YS;Chi,GC;Chang,CA |
Contributors: | 物理研究所 |
Keywords: | P-TYPE GAN;PIEZOELECTRIC FIELD;WURTZITE GAN;EMISSION;DEFECTS;CONTACT;INN |
Date: | 2001 |
Issue Date: | 2010-07-08 13:38:51 (UTC+8) |
Publisher: | 中央大學 |
Abstract: | In this study, we analyze the effects of thermal annealing by calculating the optical gain in the InGaN/GaN quantum well. The interdiffusion of Ga and In atoms across the interface of the well and the barrier resulting from thermal treatments is described |
Relation: | JOURNAL OF APPLIED PHYSICS |
Appears in Collections: | [Graduate Institute of Physics] journal & Dissertation
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