Temperature dependent performance of GaN Schottky diode rectifiers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38903

Title:	Temperature dependent performance of GaN Schottky diode rectifiers
Authors:	Cao,XA;Dang,GT;Zhang,AP;Ren,F;Pearton,SJ;Lee,CM;Chuo,CC;Chyi,JI;Chi,GC;Han,J;Chu,SNG;Wilson,RG
Contributors:	物理研究所
Keywords:	BREAKDOWN;FIELD
Date:	2000
Issue Date:	2010-07-08 13:42:31 (UTC+8)
Publisher:	中央大學
Abstract:	GaN Schottky diode rectifiers with reverse breakdown (V-RB) > 2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of V-RB and forward turn-on voltage (V-F) were measured. The V-RB values display a negative tem
Relation:	SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2
Appears in Collections:	[物理研究所] 期刊論文

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