Effects of H-2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD

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题名:	Effects of H-2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD
作者:	Yang,CC;Koh,PL;Wu,MC;Lee,CH;Chi,GC
贡献者:	物理研究所
关键词:	FIELD-EFFECT TRANSISTOR;N-TYPE GAN;GALLIUM NITRIDE;BUFFER LAYER;PHOTOLUMINESCENCE;OPTIMIZATION;RESONANCE;SAPPHIRE;DEFECTS;MOVPE
日期:	1999
上传时间:	2010-07-08 14:01:51 (UTC+8)
出版者:	中央大學
摘要:	GaN epitaxial layers were grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. The flow-rate ratio of H-2 on the upper stream to NH3 on the bottom stream is varied from 0.5 to 2. The growth condition and characterization of the GaN epitaxial layers are investigated in detail. The H-2 flow rate of the upper stream strongly affects the reactant gas flow pattern near the substrate surface and thus influences the quality of epitaxial layers. At the optimum H-2/NH3 flow ratio of 1.0, we can obtain a good quality of GaN epitaxial layers which exhibit a strong near band-edge emis-sion in the 20 K photoluminescence (PL), a full width at half maximum of 66 meV for the 300 K PL, an electron mobility of 266 cm(2)/V-s and concentration of 1 x 10(18) cm(-3) at 300 K.
關聯:	JOURNAL OF ELECTRONIC MATERIALS
显示于类别:	[物理研究所] 期刊論文

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