Delta-ray production in silicon tracking systems for 2-50 GeV electrons

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题名:	Delta-ray production in silicon tracking systems for 2-50 GeV electrons
作者:	Hou,SR;Ambrosi,G;Burger,WJ;Chang,YH;Chen,AE;Lin,WT;Produit,N;Ribordy,M
贡献者:	物理研究所
关键词:	MULTIPLE-SCATTERING;STRIP DETECTORS
日期:	1998
上传时间:	2010-07-08 14:03:52 (UTC+8)
出版者:	中央大學
摘要:	The production of F-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of T-cut = 500 keV is chosen. The delta-ray angular distribution is measured for electrons transmitting through a 320 mu m silicon wafer. The F-ray production rate is approximately 1.3 % within an angular region of 1-50 mrad. (C) 1998 Elsevier Science B.V. All rights reserved.
關聯:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
显示于类别:	[物理研究所] 期刊論文

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