Non-optimal rates of ergodic limits and approximate solutions

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题名:	Non-optimal rates of ergodic limits and approximate solutions
作者:	Pong,BJ;Pan,CJ;Teng,YC;Chi,GC;Li,WH;Lee,KC;Lee,CH
贡献者:	物理研究所
关键词:	BUFFER LAYERS;THIN-FILMS;PHOTOLUMINESCENCE;EPITAXY;DIODES;INP
日期:	1998
上传时间:	2010-07-08 14:04:39 (UTC+8)
出版者:	中央大學
摘要:	The optical and structural characteristics of GaN films implanted with Mg and Be ions, grown by low-pressure metalorganic chemical vapor deposition were studied. The low temperature (20 K) photoluminescence (PL) spectra of annealed Mg implanted GaN show a 356 nm near band edge emission, a 378 nm donor-acceptor (D-A) transition with phonon replicas, and a 528 nm green band deep level emission. The origin of the 528 nm green band emission and the 378 nm D-A emission might be attributed, respectively, to the Mg implantation induced clustering defect and the vacancy defect in GaN film. Observations of in-plane and out-of-plane x-ray diffraction spectra for as-grown undoped, Mg implanted and rapid thermal annealed GaN suggest that ion implantation induced anisotropic strain may be responsible for the observed PL emission characteristics. (C) 1998 American Institute of Physics. [S0021-8979(98)02711-X].
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[物理研究所] 期刊論文

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