The effect of thermal annealing on the Ni/Au contact of p-type GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39108

Title:	The effect of thermal annealing on the Ni/Au contact of p-type GaN
Authors:	Sheu,JK;Su,YK;Chi,GC;Chen,WC;Chen,CY;Huang,CN;Hong,JM;Yu,YC;Wang,CW;Lin,EK
Contributors:	物理研究所
Keywords:	FIELD-EFFECT TRANSISTORS;OHMIC CONTACT
Date:	1998
Issue Date:	2010-07-08 14:05:08 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, the Ni/Au layers prepared by electron beam evaporation and thermal alloying were used to form Ohmic contacts on p-type GaN films. Before thermal alloying, the current-voltage (I-V) characteristic of Ni/Au contact on p-type GaN film shows non-Ohmic behavior. As the alloying temperature increases to 700 degrees C, the I-V curve shows a characteristic of Ohmic contact. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ca-Au compounds, such as Ga4Ni3, Ga3Ni2, GaAu, and GaAu2, at the metal-semiconductor interface. The diffusing behavior of both Ni and Au have been studied by using Auger electron spectroscopy and Rutherford backscattering spectrometry. In addition, x-ray diffraction measurements indicate that the Ni3N and Ga4Ni3 compounds were formed at the metal-semiconductor interface. (C) 1998 American Institute of Physics.
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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